Photovoltaic properties and technological aspects of In1-xGaxN/Si, Ge (0Identifieur interne : 008605 ( Main/Repository ); précédent : 008604; suivant : 008606

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Photovoltaic properties and technological aspects of In1-xGaxN/Si, Ge (0Auteurs : RBID : Pascal:06-0224880

Descripteurs français

• Pascal (Inist)
  • Système photovoltaïque, Hétérojonction, Cellule solaire, Hétérostructure, Simulation, Performance, Cellule solaire silicium, Homojonction, Cellule couche mince, Morphologie, Propriété physique, Haute résolution, Microscopie électronique transmission, Spectrométrie SIMS, Indium Gallium Azoture, Photoluminescence, Mobilité électron, Affinité électronique, Porteur majoritaire.
• Wicri :
  • concept : Simulation.

English descriptors

• KwdEn :
  • Electron affinity, Electron mobility, Heterojunction, Heterostructures, High resolution, Homojunction, Indium Gallium Azides, Majority carrier, Morphology, Performance, Photoluminescence, Photovoltaic system, Physical properties, Secondary ion mass spectrometry, Silicon solar cells, Simulation, Solar cell, Thin film cell, Transmission electron microscopy.

Abstract

Photovoltaic properties of n-In_1-xGa_xN/p-Si, Ge (IGN) heterostructures, covering the compositional range 0

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Links toward previous steps (curation, corpus...)

• to stream Main, to step Corpus: 009069

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Links to Exploration step

Pascal:06-0224880

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Le document en format XML

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Ga

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N/Si, Ge (0</title>

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